Dielectric Relaxation of Lanthanide-Based Ternary Oxides: Physical and Mathematical Models
نویسندگان
چکیده
منابع مشابه
Dielectric relaxation of high-k oxides
Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion. Several mathematical models were discussed to describe the dielectr...
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Systematic investigations of ternary In-based amorphous oxides, IneXeO with X 1⁄4 Sn, Zn, Ga, Cd, Ge, Sc, Y, or La, are performed using ab-initio molecular-dynamics liquid-quench simulations. The results reveal that the local MeO structure remains nearly intact upon crystalline to amorphous transition and exhibit weak dependence on the composition. In marked contrast, the structural characteris...
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Defect diffusion has proven to be a good tool in many cases to solve the problem arising when molecular motions are not describable by expo nential correlation functions i.e. as Poisson proc esses. Thus a series of models and applications can be found in literature [1 — 6 ] concerning continuous or step-wise diffusion mechanism with and without restriction. On the other hand there is the poss...
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ژورنال
عنوان ژورنال: Journal of Nanomaterials
سال: 2012
ISSN: 1687-4110,1687-4129
DOI: 10.1155/2012/241470